Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells
Hyundai Park, Alexander Fang, Satoshi Kodama, and John Bowers
Keywords (OCIS):
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5300) Optoelectronics : Photonic integrated circuits
Abstract
A novel laser that utilizes a silicon waveguide bonded to AlGaInAs quantum wells is demonstrated. This wafer scale fabrication approach allows the optical waveguide to be defined by CMOS-compatible silicon processing while optical gain is provided by III-V materials. The AlGaInAs quantum well structure is bonded to the silicon wafer using low temperature oxygen plasma-assisted wafer bonding. The optically pumped 1538 nm laser has a pulsed threshold of 30 mW and an output power of 1.4 mW.
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History
Original Manuscript: October 18, 2005
Revised Manuscript: November 4, 2005
Published: November 14, 2005
Citation
H. Park, A. Fang, S. Kodama, and J. Bowers, "Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells," Opt. Express 13, 9460-9464 (2005)
http://www.opticsinfobase.org/abstract.cfm?URI=oe-13-23-9460
DOI
doi:10.1364/OPEX.13.009460
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