TOP > Available Issues > Table of Contents > Abstract
 | Please click this button non-subscribers to purchase a paper individually. |
 | Femtosecond Visible Pump Mid-IR Probe Study on the Effects of Surface Treatments on Ultrafast Photogenerated Carrier Dynamics in n-GaAs (100) Crystals
|
| | Kojiro Ebina1), Ichizo Yagi1)2), Hidenori Noguchi1) and Kohei Uosaki1) |
| 1) Phyical Chemistry Laboratory, Division of Chemistry, Graduate School of Science, Hokkaido University
2) CREST, Japan Science and Technology Agency (JST) |
| (Received January 27, 2004)
|
|
The femtosecond visible pump mid-IR probe technique was employed to investigate photogenerated carrier dynamics in n-GaAs (100) crystals subjected to various surface treatments in a time domain of picoseconds–several tens of picoseconds. Pt- or Ru-treatment significantly accelerated the carrier recombination as a result of the introduction of surface states. The recombination rate was also increased by Au-treatment but less significantly than that by the Pt- or Ru-treatment. The effect of sulfide treatment on the recombination dynamics seemed to be rather small, although it has been reported that the density of surface states is decreased by the sulfide treatment. |
| | | |
| Please click this button non-subscribers to purchase a paper individually. |
| doi:10.1246/cl.2004.604 | | JOI JST.JSTAGE/cl/2004.604 |
| Copyright (c) 2004 The Chemical Society of Japan |
|
|