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Field Enhanced Dielectronic Recombination of Si11+ and Cl14+ Ions

T Bartsch et al 1999 Phys. Scr. T80B 305-306   doi: 10.1238/Physica.Topical.080a00305  Help

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T Bartsch1, A Müller1, W Spies1, J Linkemann1, S Schippers1, C Brandau1, H Danared2, D R DeWitt3, H Gao3, W Zong3, R Schuch3, A Wolf4, G Gwinner4, A A Saghiri4, M Schmitt4, M Beutelspacher4, M Grieser4 and G H Dunn5
1 Institut für Kernphysik, Universität Giessen, 35392 Giessen, Germany
2 Manne Siegbahn Laboratory, Stockholm University, 10405 Stockholm, Sweden
3 Department of Atomic Physics, Stockholm University, 10405 Stockholm, Sweden
4 Max-Planck-Institut für Kernphysik, 69117 Heidelberg, Germany
5 JILA, University of Colorado, Boulder, Colorado 80309-0440, USA

Abstract. The enhancement of dielectronic recombination of multiply charged ions by external electric fields has been studied under controlled conditions. The heavy ion storage rings CRYRING at Stockholm University and the heavy ion storage ring TSR at the Max-Planck-Institut in Heidelberg were used to store beams of Si11+ (ion energy 280 MeV) and Cl14+ (ion energies 250 MeV and 110 MeV), respectively. Recombination in the electron cooler has been measured over energy ranges covering all resonances due to 2s → 2p core exitation. External electric fields up to 183 V/cm at CRYRING and up to 379 V/cm at the TSR have been applied. In the TSR experiment the influence of different magnetic guiding fields as well as the influence of different electron densities in the electron cooler on the recombination rate was investigated. A significant rate enhancement was found for 1s22pnl Rydberg resonances with n > 25 for Si11+ ions and n > 20 for Cl14+ ions.

PACS number: 34.80.Lx

Received 14 September 1998

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