ABSTRACT
This chapter reports the new approach for THz enhancement from semi-insulating (SI) and low-temperature gallium arsenide (LT-GaAs) semiconductor surfaces. The generated THz radiation is detected using photoconductive antennas (PCA). The obtained results from both types of semiconductor surfaces are compared and observed that the THz peak amplitude from semi-insulating gallium arsenide (SI-GaAs) was higher than the LT-GaAs surface. The effect of laser wavelength on generated THz peak amplitude is carried out. We have enhanced the efficiency of generated THz radiation from SI-GaAs using the combination of lens, BBO, and dual-wave plate (DWP). Further, the obtained THz radiation was used to record the transmittance of packing materials such as cardboard and plastic.
