Carrier Induced Gain Simulation of InGaAlAs/InP Nano-Heterostructure

This paper reports behaviors of anti-guiding factor, carrier induced refractive index change, material and mode gain of InGaAlAs/InP materials based lasing nano-heterostructure consisting of single quantum well (SQW). In addition, material parameters of InGaAlAs have also been estimated. The anti-guiding factor has been calculated and discussed in terms of differential gain and refractive index change with respect to carriers. The material and mode gain have been simulated within TE mode for various carrier concentrations. The gain simulation of lasing nano-heterostructure based on InGaAlAs/InP material combination suggests that the maximum gain appears at the wavelength of 1.55 μm corresponding to the carrier concentration of 2.0 × 10¹⁸/cm³. At this carrier concentration low divergence output beams result. The maximum gain achieved at the wavelength of 1.55 m gives a minimum optical attenuation in the optical fiber communication systems. Hence the lasing nano-heterostructure of InGaAlAs/InP exhibits its utility in the optical fiber based communication system.