Highly Scalable PVD/CVD-Cobalt Bilayer Salicidation Technology for sub-50nm CMOSFETs

Jong-Ho Yun¹, Hyun-Su Kim¹, Sug-Woo Jung¹, Eunji Jung¹, Se-Hoon Kim², B.-H Kim², Gilheyun Choi¹, Sungtae Kim¹, U-In Chung¹ and Joo-Tae Moon¹

© 2005 ECS - The Electrochemical Society
ECS Meeting Abstracts, Volume MA2005-01, K1 - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment Citation Jong-Ho Yun et al 2006 Meet. Abstr. MA2005-01 684 DOI 10.1149/MA2005-01/14/684