High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

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© 2011 ECS - The Electrochemical Society
, , Citation Pragya Shrestha et al 2011 ECS Trans. 41 461 DOI 10.1149/1.3633062

1938-5862/41/3/461

Abstract

Accurately measure the transient details of switching memristive switch is crucial to the elucidation of the switching mechanism. Such high-speed measurements often plagued by artifacts. Here we describe a measurement technique capable of capturing Set/Reset characteristics of memristive switches with high accuracy. It can accurately measure the transient current during the Set/Reset operation with rise time as short as 2 ns. The circuit is designed to cycle through (Set/Reset) and sense (read the state) rapidly to enable the study of endurance. The sense circuit is able to measure currents as low as 30 pA yielding accurate measurement of the resistance in the off state up to 1.6 GΩ. Pt/Ta2O5/Cu memeristive switches are examined that exhibit ON and OFF state resistance (Ron and Roff) ratio of >104 and endurance cycles of >6x104.

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10.1149/1.3633062