Abstract
For next generation CMOS technology nodes, new channel materials, such as Ge and III/V semiconductors, are investigated because of their higher intrinsic carrier mobility as compared to Si. In this work, we have studied the chemisorption reaction mechanisms for Atomic Layer Deposition (ALD) of the high-k dielectric Al2O3 on S-passivated Ge by means of ab initio calculations. The calculations provide insight into the specific interactions occurring during gate stack formation and the character of the bonds at the Ge interface.