Abstract
In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors.