Improved Performance of InGaN–GaN Light-Emitting Diode by a Periodic n-Bowl Mirror Array

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Published 24 June 2009 © 2009 ECS - The Electrochemical Society
, , Citation Cheng Liao and YewChung Sermon Wu 2009 Electrochem. Solid-State Lett. 12 J77 DOI 10.1149/1.3156834

1944-8775/12/9/J77

Abstract

A periodic n-bowl mirror structure was introduced into light-emitting diodes with roughened p-GaN surface (RP-LED) by wafer bonding and laser lift-off technology. The performance of these n-bowl mirror light-emitting diodes (NBM-LEDs) was better than that of RP-LED. Besides, the light intensity and the output power of NBM-LEDs were increased with the decrease in n-bowl dimension. The view angle was decreased with the diameter of the n-bowl.

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10.1149/1.3156834