Abstract
Silicon Nitrides were deposited on the silicon substrates by ECR-CVD (electron cyclotron resonance chemical vapor deposition), without using the pad oxide in LOCOS (LOCal Oxidation of Silicon) isolation technology. The SiNx/Si structure was used to substitute the SiNx/SiO2/Si. The study of this type of the structure was motivated by the possibility to reduce the length of the bird's beak. Defects were created on silicon because the high temperature (1000ºC) applied on SiNx/Si. The Dash wet chemical etch was used to etch the defect on silicon. Optical and SEM microscopy analysis were used to investigate the bird's beak in the obtained LOCOS structures and the defects (dislocations) on silicon performed after high temperature process.