Abstract
Amorphous films of silicon nitride‐silicon dioxide mixtures have been deposited on silicon substrates by the pyrolysis of silane in ammonia‐oxygen mixtures in a gas flow system. The properties of these films such as composition, density, dissolution rate, dielectric constant, refractive index, infrared absorption, etc., were determined as a function of the reactant composition. MIS (metal‐insulator‐silicon) and MIOS (metal‐insulator‐oxide‐silicon) structures were prepared by using silicon nitride‐silicon dioxide mixtures as the insulator, and their capacitance‐voltage behavior compared with that of MNS (metal‐nitride‐silicon) and MNOS (metal‐nitride‐oxide‐silicon) structures. Similar to MNS structures, the MIS structures under study are characterized by high charge densities in the silicon‐insulator interface region and by the ease of charge transfer across the interface. These effects are considerably reduced in MIOS structures; however, MIOS structures are less stable than MNOS structures under electrical and thermal stresses.