Abstract
We explore the possibility of using solid-electrolytes as active materials for non-volatile memory devices. We show that large ionic concentrations can be reversibly induced and then depleted using field effect in Cu2S thin films. Conditions needed to grow/etch nanowires in solid-electrolytes are also discussed. The field-induced ionic conductivities does not involve oxidation/reduction of Cu++ while nanowire growth/etch does. We discuss retention issues, write/erase speed and other related parameters in Cu2S and other SE such as Ag2S and CuI. Interestingly, it is easier to grow/etch nanowires in Ag2S than in Cu2S. Similarities and differences between electronic and optical reduction/oxidation in SE and silver halides are also discussed.