Abstract
The ion microprobe has been used to study the effects of crystal orientation and oxidation temperature on the segregation of boron at the silicon‐silicon dioxide interface. The segregation coefficient was determined by measuring directly the total boron concentration in the oxide and the silicon at the interface, for (100) and (111) silicon, oxidized at 1000°, 1100°, and 1200°C in dry oxygen. It was found that boron segregation coefficients for (111) silicon are higher than those for (100) silicon for corresponding oxidation temperatures, and that these segregation coefficients decrease with increasing temperature. The experimental values of the boron segregation coefficient, 
, may be described by
Diffusion coefficients were extracted from the experimental data using a modeling technique and agree well with the generally accepted values. The diffusion coefficients obtained for oxidizing ambient are given by
