Effect of Trace Elements on Etching of Aluminum Electrolytic Capacitor Foil

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© 1985 ECS - The Electrochemical Society
, , Citation K. Arai et al 1985 J. Electrochem. Soc. 132 1667 DOI 10.1149/1.2114188

1945-7111/132/7/1667

Abstract

An investigation was made as to the effect of trace impurities, particularly bismuth and boron, on etching morphology and capacitance of aluminum electrolytic capacitor foil. It was found that as little as 2 wt‐ppm bismuth in foil strongly accelerated surface etching, inhibited tunneling, and consequently lowered capacitance. 3 wt‐ppm boron also enhanced surface etching, but lowered capacitance less than bismuth. The reason for these results was considered

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