Abstract
Shallow p‐n diodes with junction depths between 0.15 and 0.3 μm have been fabricated by rapid thermal and furnace annealing of boron fluoride implants made into single‐crystal wafers. The implants were performed at 30 keV with a dose of 
or 
. For very shallow junctions, the residual implant damage is found to degrade the reverse bias diode leakage characteristics. The residual damage can be nearly eliminated and shallow junction characteristics can be improved by preamorphizing the wafers with a single 50 keV silicon implant at a dose of 
.