Abstract
The carbon deposition behavior on Ni film supported on the two types of GDC, as-sintered and redox-processed, is investigated under dry 5% CH4 at 800 oC for 1 h. Totally different carbon deposition behaviors were observed. Large amount of carbon was deposited on the Ni film supported on as-sintered GDC, while there is no carbon deposition on the Ni film supported on GDC with redox treatment. It seems that the redox treatment for GDC substrate plays an important role in suppressing the carbon deposition on Ni film, which would be related to high concentration of the oxygen vacancies on the GDC surface.