Jiacheng Ni
Weisheng Zhao
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Abstract
Traditional memory technologies face severe challenges in meeting the ever-increasing power and memory bandwidth requirements for high-performance computing and big-data analyses. Several emerging memory technologies are promising as the replacements of SRAM or DRAM. Among them, STT-MRAM can be used to replace SRAM as the last-level cache (LLC). However, it suffers from high write energy and latency. In this article, we investigate data patterns written from SRAM-based upper-level cache to STT-MRAM-based LLC to explore the write energy reduction potential. Depending on the data layout within a cache line, redundant bits can be identified and eliminated from write back operations to save STT-MRAM write energy. We also propose a dynamic profiling method to accommodate different application characteristics. The extensive simulation results show that write energy can be saved by 37.05% ∼ 38.89% for static profiling and 19.76% ∼ 34.29% for dynamic profiling.
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Index Terms
- Write Back Energy Optimization for STT-MRAM-based Last-level Cache with Data Pattern Characterization
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