Abstract
Semiconductor InN films epitaxially grown by the radio frequency magnetron sputtering deposition method were studied in terms of the strain evolution as a function of the film thickness and growth temperature. The structure and surface morphology of the InN films were analyzed using synchrotron X-ray scattering and atomic force microscopy (AFM) experiments, respectively. The lattice strain of the InN films grown at 300°C was larger than that of the films grown at 490°C. As the film thickness increases, the lattice strain is reduced and completely relaxes when the thickness is larger than 350 Å. The average roughness on the surface of the InN film increased with the growth temperature.