Abstract
A mean-free-path (LB) measurement was made for hot quasiparticles injected into the Nb-base film of superconductor-base hot-electron transistors. The measurement was analogous to that used for a conventional hot-electron transistor, and gave LB for the quasiparticles travelling in the direction normal to the Nb-base film surface. An LB(4.2 K) value in excess of 1000 Å was attained for films thicker than 800 Å, whereas a marked reduction in LB was seen in thin films, owing to the coarse crystalline quality of Nb film grown at the beginning of the sputter deposition.
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