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A Comparative Study on the Optical and Electrical Properties of Si-Doped Polar and Nonpolar GaN

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Published 24 April 2012 Copyright (c) 2012 The Japan Society of Applied Physics
, , Citation Keun Man Song and Hogyoung Kim 2012 Jpn. J. Appl. Phys. 51 051002 DOI 10.1143/JJAP.51.051002

1347-4065/51/5R/051002

Abstract

Si-doped polar (c-plane) and nonpolar (a-plane) GaN layers grown by metal–organic vapor phase epitaxy (MOVPE) were comparatively investigated using photoluminescence (PL) and Hall-effect measurements. While c-plane GaN revealed both band-acceptor and donor–acceptor transitions, the PL spectra for a-plane GaN were related to extended defects such as basal stacking faults (BSFs) and prismatic stacking faults (PSFs). A new emission peak was observed at 3.361 eV in the Si-doped a-plane GaN, which was attributed to Si-doping-induced defects. The temperature-dependent Hall-effect measurements showed that for c-plane GaN, mobility was dominated by optical phonon and ionized impurity scattering at high and low temperature, respectively. Conversely, for a-plane GaN, the scattering mechanism due to dislocations was dominant at all temperatures.

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