Abstract
We firstly propose a novel U-shape resistive cell structure which is the best fit for generating low power resistive random access memory (RRAM) with forming-less process. We find that irregular resistive switching behavior in the initial transition and the characteristics associated with it. Controlling the conducting filament (CF) dimension and deposition orientation of resistive material are expected to reduce the distribution and forming voltage, which enables low power RRAM to be feasible without forming state. Simple fabrication flow and device performances are also evaluated in the aspect of forming-less process. Numerical simulation is performed using random circuit breaker model (RCB) to confirm the proposed structure.