Abstract
In order to investigate the effect of accumulated charge on a substrate surface in the deposition of a SiO2 film with an atmospheric-pressure plasma jet, we have measured the discharge current flowing into a copper substrate, which was placed 20 mm from the exit of the plasma jet and connected to a variable capacitor in series. We found that the discharge current decreased markedly when the capacitance of the substrate was below 100 pF, and the deposition rate of SiO2 traced the variation of the capacitance. To analyze the behavior of the plasma jet, we considered an equivalent circuit of our system and verified the validity of our supposition that the accumulated charge restricts the deposition rate. Thereby, we found that the discharge current and deposition rate were determined by the capacitance of both the glass tube wall and the substrate.