Abstract
We propose an analytical model for ion implantation profiles in a Si1-xGex substrate with various content ratios x. The moments associated with the peak region were evaluated using the extended Lindhard–Scharff–Schiott (LSS) theory. The channeling length was related to the maximum range associated with electron stopping power only. We also express the shape of the channeling tail and the channeling dose empirically but with a universal form. We showed that the theory reproduces the experimental data well. Since the theory simultaneously gives information on the lateral distribution, we established a database of B, P, and As ion implantation profiles including their lateral distribution profiles in Si1-xGex substrates.