Abstract
We investigate the properties of semipolar InGaN/GaN quantum wells (QWs) emitting in the blue and green spectral region. A single QW is grown on inverse V-shaped GaN pyramids which are formed by selective area epitaxy on a template masked with different hexagonally ordered patterns. Using photo- and locally resolved cathodoluminescence measurements the high material quality of the semipolar planes could be confirmed (full width at half maximum (FWHM) of D0X: 2.6 meV). Furthermore, it was found that the InGaN QW emission wavelength within one pyramid depends on the facet type as well as on the position along the facet.