Comparison of Young's Modulus Dependency on Beam Accelerating Voltage between Electron-Beam- and Focused Ion-Beam-Induced Chemical Vapor Deposition Pillars

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Published 20 June 2006 • Copyright (c) 2006 The Japan Society of Applied Physics
, , Citation Satoshi Okada et al 2006 Jpn. J. Appl. Phys. 45 5556 DOI 10.1143/JJAP.45.5556

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1 CREST-JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

2 Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

3 Fundamental and Environmental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan

4 SII Nanotechnology Inc., 36-1 Takenoshita, Oyama-cho, Sunto-gun, Shizuoka 410-1393, Japan

5 Laboratory of Advanced Science and Technology for Industry, University of Hyogo, 3-1-2 Koto, Kamigori, Ako, Hyogo 678-1205, Japan

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  1. Received 5 December 2005
  2. Accepted 31 January 2006
  3. Published

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1347-4065/45/6S/5556

Abstract

We investigated Young's modulus of amorphous carbon (a-C) pillars that exhibited different properties depending on which of two fabrication methods were used, electron-beam-induced chemical vapor deposition (EB-CVD) or focused ion-beam-induced CVD (FIB-CVD). The Young's modulus of the FIB-CVD pillars was almost linearly proportional to the accelerating voltage, while that of the EB-CVD pillars showed a completely opposite results. Secondary electrons seemed to play an important role in the increase of Young's modulus of the pillars grown using EB-CVD.

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10.1143/JJAP.45.5556