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Jpn. J. Appl. Phys. 43 (2004) pp. 1873-1878  |Previous Article| |Next Article|  |Table of Contents|
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Effects of Post Dielectric Deposition and Post Metallization Annealing Processes on Metal/Dy2O3/Si(100) Diode Characteristics

Shun-ichiro Ohmi, Hiroyuki Yamamoto1, Junichi Taguchi1, Kazuo Tsutsui and Hiroshi Iwai1

Interdisciplinary Graduate School of Science & Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
1Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

(Received September 24, 2003; accepted December 16, 2003; published April 27, 2004)

Ultra-high vacuum annealing was investigated for Dy2O3 films deposited on Si(100) substrates. The leakage current of the Dy2O3 films deposited at room temperature (RT) was found to be decreased without any increase of the equivalent oxide thickness (EOT) by the in-situ vacuum annealing method compared to that of the conventional rapid thermal annealing (RTA) in O2. The negative flat-band voltage (VFB) shift observed after the in-situ vacuum annealing process was suppressed by increasing the deposition temperature of Dy2O3 on chemically oxidized Si from RT to 250°C. The EOT of 1.1 nm with the leakage current of 0.29 A/cm2 (@VFB+1 V) was obtained for the Dy2O3 film after the air-brake and vacuum annealing, and the EOT of 0.63 nm with 4 A/cm2 (@VFB+1 V) was achieved for the Dy2O3 film with the TaN gate electrode after the post metallization annealing (PMA).

KEYWORDS: high-k, rare earth oxide, Dy2O3, e-beam, vacuum annealing, TaN
URL: http://jjap.ipap.jp/link?JJAP/43/1873/
DOI: 10.1143/JJAP.43.1873


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