Fabrication Process and Interfacial Study of High-Tc Josephson Junctions fabricated using the Focused Ion Beam Technique

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Copyright (c) 1999 The Japan Society of Applied Physics
, , Citation Shin'ichi Morohashi et al 1999 Jpn. J. Appl. Phys. 38 698 DOI 10.1143/JJAP.38.698

1347-4065/38/2R/698

Abstract

We describe the fabrication processes of high-Tc Josephson junctions fabricated using the focused ion beam (FIB) technique, and the junction interfaces using cross-sectional transmission electron microscopy. This FIB technique has the two functions of etching and deposition. Using each of the FIB functions independently, and also together, we have fabricated junctions with three types of structures. The two types of junctions fabricated using each of the FIB functions independently are classified as grain boundary junctions with multi-grain boundaries, and the junction fabricated using both FIB functions is a proximity-effect type junction.

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10.1143/JJAP.38.698