Abstract
Uniformity of thin film transistor (TFT) characteristics was evaluated by varying the channel size. As channel length decreased and width fell below 1 µm, uniformity was degraded drastically. A few samples showed high-performance characteristics such as sharp gate voltage swing below 100 mV/dec and high mobility as high as 100 cm2/V·s near room temperature. Upon evaluation of their temperature dependence, the conduction mechanism showed not polycrystalline but single-crystal-like properties in the lattice scattering. The improved TFTs are thought to have been formed in grain boundary-free crystal grains.