Abstract
Hafnium dioxide (HfO2) thin films are deposited on indium-tin-oxide (ITO)-coated glass substrates by the radio-frequency (RF) sputtering method using a HfO2 sintered target. The deposition conditions, dielectric loss and dielectric constant of HfO2 films before and after heat treatment are studied. The best deposition conditions for HfO2 films are RF power 200 W, substrate temperature 100°C and sputtering gas pure Ar. The maximum dielectric constants are about 150 and 45 with 1 kHz signal excitation before and after annealing, respectively. They are higher than any ever reported.