Preparation of Metallic W Film by H2-Reduction of WO3 Electron-Resist Film

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Mamoru Baba et al 1991 Jpn. J. Appl. Phys. 30 2581 DOI 10.1143/JJAP.30.2581

1347-4065/30/10R/2581

Abstract

A metallic W film was prepared from a WO3 electron-resist film by H2-reduction above 600°C, and the characteristics of the reduced W film have been investigated. It was found that the electric resistivity of the film decreases and the size of the constituent grains increases with increasing reduction temperature, while the film thickness decreases down to about 40% of the initial thickness above 600°C. The reduced W film had a discontinuous structure with many cracks and had random crystal orientation of the grains. A fine pattern of metallic W with high contrast and no crack was fabricated by the H2-reduction of a fine pattern of the WO3 electron resist.

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10.1143/JJAP.30.2581