Abstract
Dynamic charge centroid on retention characteristics of nonvolatile memories with double nanostructures (DNSs), gadolinium oxide nanocrystal (Gd2O3-NC), and hafnium oxide charge-trapping layer (HfO2-CTL) was investigated. Compared with the conventional Gd2O3-NC memory, the DNS memories exhibited superior data retention. In addition, the DNS memory with thicker HfO2-CTL presented more charge loss because the trapped charge centroid was located close to the HfO2/tunneling layer interface. The tendency of charge loss was consistent with the dynamic charge centroid at the low-flat-band-voltage shift region, indicating that the charge centroid location was important for the data retention of DNS nonvolatile memories.