Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field

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Published 27 August 2010 ©2010 The Japan Society of Applied Physics
, , Citation Grace D. Metcalfe et al 2010 Appl. Phys. Express 3 092201 DOI 10.1143/APEX.3.092201

1882-0786/3/9/092201

Abstract

A sinusoidal dependence of the s- and p-polarized terahertz (THz) emission on sample rotation angle in m- and a-plane InN has been observed using ultrafast pulse excitation at a moderate pump fluence of ∼1 µJ/cm2. The angular dependence is attributed to carrier drift in an intrinsic in-plane electric field parallel to the c-axis induced by stacking fault-terminated internal polarization at wurtzite domain boundaries, with a THz polarity flip corresponding to a reversal of the c-axis. The p-polarized THz signal also consists of an angular-independent component, similar to that from c-plane InN, consistent with surface normal transport due to the photo-Dember effect.

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10.1143/APEX.3.092201