High-Efficiency Green Phosphorescent Organic Light-Emitting Devices with Chemically Doped Layers

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Published 8 March 2007 Copyright (c) 2007 The Japan Society of Applied Physics
, , Citation Soichi Watanabe et al 2007 Jpn. J. Appl. Phys. 46 1186 DOI 10.1143/JJAP.46.1186

1347-4065/46/3R/1186

Abstract

We have developed green phosphorescent organic light-emitting devices (OLEDs) with high quantum and luminous efficiencies. A green phosphorescent metal complex, fac-tris(2-phenylpyridine) iridium [Ir(ppy)3], was used as an emitter material. Wide-energy-gap materials with high triplet excited energy levels were used as host materials for Ir(ppy)3 and as carrier transport materials. Hole injection and electron injection from the electrodes were balanced by placing chemically doped layers at the interface between the electrodes and the organic layers. In addition, a highly reflective Ag cathode was employed as an anode, instead of a conventional Al cathode to enhance the reflectivity of the cathode metal. An optimized device exhibited an external quantum efficiency (EQE) of 27% (95 cd/A) and a high power efficiency of 97 lm/W at 100 cd/m2 at 3.1 V.

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