Low Temperature Synthesis of Aligned Carbon Nanotubes by Inductively Coupled Plasma Chemical Vapor Deposition Using Pure Methane

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Published 1 April 2003 • Copyright (c) 2003 The Japan Society of Applied Physics
, , Citation Shin-ichi Honda et al 2003 Jpn. J. Appl. Phys. 42 L441 DOI 10.1143/JJAP.42.L441

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1 Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

2 Department of Electrical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Dates

  1. Received 15 January 2003
  2. Accepted 5 March 2003
  3. Published

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1347-4065/42/4B/L441

Abstract

Inductively coupled plasma chemical vapor deposition combined with substrate biasing using pure methane was applied to low-temperature synthesis of carbon nanotubes. We found that the resultant carbon nanotubes were crystalline even at a growth temperature of 500°C. The growth mechanism of the crystallized carbon nanotubes was discussed in terms of the moderate etching of carbon deposit by hydrogen species dissociated from methane in inductively coupled plasma.

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