Abstract
It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.
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ACKNOWLEDGMENTS
SIMS measurements were performed on the equipment of the Federal Center of Collective Use “Materials Science and Diagnostics in Advanced Technologies.
Funding
This study was supported by the Ministry of Science and Higher Education of the Russian Federation, agreement no. 14.577.21.0250 dated Sept. 26, 2017, unique object identifier RFMEFI57717X0250.
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Translated by E. Bondareva
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Malin, T.V., Milakhin, D.S., Aleksandrov, I.A. et al. Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors. Tech. Phys. Lett. 45, 761–764 (2019). https://doi.org/10.1134/S1063785019080108
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DOI: https://doi.org/10.1134/S1063785019080108