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Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure

  • Physics of Semiconductor Devices
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Abstract

The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n +-InAs with the n +-InAs-substrate side illuminated and sensitive in the region of 4-μm are reported. An analysis is performed of the mechanisms of current flow in the temperature range of 77–353 K and also of the photosensitivity and the speed of response taking into account the spatial distribution of nonequilibrium radiation and the data of capacitance–voltage measurements.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    N. D. Il’inskaya, S. A. Karandashev, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, N. M. Stus & A. A. Usikova

  2. Limited Liability Company Ioffe LED Ltd., St. Petersburg, 194021, Russia

    N. G. Karpukhina, A. A. Lavrov & N. M. Stus

Authors
  1. N. D. Il’inskaya
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  2. S. A. Karandashev
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  3. N. G. Karpukhina
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  4. A. A. Lavrov
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  5. B. A. Matveev
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  6. M. A. Remennyi
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  7. N. M. Stus
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  8. A. A. Usikova
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Corresponding author

Correspondence to N. D. Il’inskaya.

Additional information

Original Russian Text © N.D. Il’inskaya, S.A. Karandashev, N.G. Karpukhina, A.A. Lavrov, B.A. Matveev, M.A. Remennyi, N.M. Stus, A.A. Usikova, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 5, pp. 657–662.

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Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G. et al. Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure. Semiconductors 50, 646–651 (2016). https://doi.org/10.1134/S1063782616050122

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  • DOI: https://doi.org/10.1134/S1063782616050122

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