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Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC p+–n––n+ diodes at low temperatures (77 K)

  • Physics of Semiconductor Devices
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Abstract

The low temperature (77 K) transient switch-on characteristics of 4H-SiC p+–n––n+ diodes are measured in the pulse mode. Using a simple analytical model, the effect of impurity breakdown in a heavily doped p+-type emitter on the current rise dynamics after applying high-amplitude forward-bias pulses to the diode is explained.

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Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    P. A. Ivanov, A. S. Potapov & T. P. Samsonova

Authors
  1. P. A. Ivanov
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  2. A. S. Potapov
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  3. T. P. Samsonova
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Correspondence to P. A. Ivanov.

Additional information

Original Russian Text © P.A. Ivanov, A.S. Potapov, T.P. Samsonova, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 7, pp. 999–1002.

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Ivanov, P.A., Potapov, A.S. & Samsonova, T.P. Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC p+–n––n+ diodes at low temperatures (77 K). Semiconductors 49, 976–979 (2015). https://doi.org/10.1134/S1063782615070118

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  • DOI: https://doi.org/10.1134/S1063782615070118

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