Abstract—
The aim of this work is to study the effect that the process of iron and carbon doping of a GaN epitaxial layer on sapphire can influence (affects) on the features of growth of epitaxial films and their dislocation structure. The following research methods are used in the study: secondary ion mass spectroscopy (SIMS), selective chemical etching of spherical sections, and single-crystal diffractometry. It is shown that carbon doping of a GaN epitaxial layer during growth can lead to a significant decrease in the dislocation density of the epitaxial layers. It is also demonstrated that, for samples doped with iron, a decrease in the number of short dislocations in the bulk of the structure is characteristic; however, a large number of extended dislocations are generated, encouraging iron diffusion into the working regions of the heterostructures, which is confirmed by the iron depth distribution of the layers, measured by the SIMS method.
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REFERENCES
Liliental-Weber, Z., dos Reis, R., Weyher, J.L., and Staszczak, G., The importance of structural in homogeneity in GaN thin films, J. Cryst. Growth, 2016, vol. 456, pp. 160–167.
Morkoç, H., Handbook of Nitride Semiconductors and Devices, Vol. 1: Materials Properties, Physics and Growth, Weinheim: Wiley-VCH, 2009, pp. 817–1191.
Polyakov, A.Y. and Lee, I.-H., Deep traps in GaN-based structures as affecting the performance of GaN devices, Mater. Sci. Eng. R, 2015, vol. 94, pp. 1–56.
Kim, D.-S., Won, Ch.-H., Kang, H.-S., Kim, Y.-J., Kim, Y.T., Kang, I.M., and Lee, J.-Y., Growth and characterization of semi-insulating carbon-doped/ undoped GaN multiple-layer buffer, Semicond. Sci. Technol., 2015, vol. 30, pp. 035010-1–6.
Bergsten, X.Li, Nilsson, D., Danielsson, O., Pedersen, H., Rorsman, N., Janzen, E., and Forsberg, U., Carbon doped GaN buffer layer using propan for high electron mobility transistor applications: grown and device results, Appl. Phys. Lett., 2015, vol. 107, pp. 26105–15.
Feng, Z.H., Li, B., Yuan, F.P., et al., Influence of Fe-doping on GaN grown on sapphire substrates by MOCVD, J. Cryst. Growth, 2007, vol. 309, no. 1, p. 8.
Cui Lei, Yin Haibo, Jiang Lijuan, Wang Quan, Feng Chun, et al., The influence of Fe doping on the surface topography of GaN epitaxial material, J. Semicond., 2015, vol 36, no. 10.
Lipski, F., Semi-insulating GaN by Fe-doping in hidride vapor phase epitaxy using a solid iron source, Annual Report, Inst. Optoelectron., Ulm Univ., 2010.
Polyakov, A.Y., Smirnov, N.B., Dorofeev, A.A., Gladysheva, N.B., Kondratyev, E.S., Shemerov, I.V., Turutin, A.V., Ren, F., and Peartond, S.J., Deep traps in AlGaN/GaN high electron mobility transistors on SiC, ECS J. Solid State Sci. Technol., 2016, vol. 5, no. 10, pp. Q260–Q265.
Simpkins, B.S., Yu, E.T., Waltereit, P., and Speck, J.S., Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride, J. Appl. Phys., 2003, vol. 94, p. 1448.
Enisherlova, K.L., Rusak, T.F., Korneev, V.I., and Zazulina, A.N., Effect of SiC substrate properties on structural perfection and electrical parameters of AlGaN/GaN layers, Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh., 2015, vol. 18, no. 3, pp. 221–228.
Govorkov, A.V., Polyakov, A.Ya., Yugova, T.G., Smirnov, N.B., Petrova, E.A., Mezhennyi, M.V., Markov, A.V., Lee, I.-H., and Pearton, S.J., Identification of dislocations and their influence on the recombination of charge carriers in gallium nitride, J. Surf. Invest.: X-ray, Synchrotron Neutron Tech., 2007, vol. 1, no. 4, pp. 380–385.
Enisherlova, K.L., Lutzau, A.V., and Temper, E.M., Odnokristal’naya rentgenovskaya difraktometriya geterostruktur (Heterostructure Investigation Using X-ray Single-Crystal Diffractometry Method), Moscow: Pul’sar, 2016.
Zhang, H., Miller, E.J., and Yua, E.T., Analysis of leakage current mechanisms in Schottky contacts to GaN and AlN0.25Ga0.75N/GaN grown by molecular-beam epitaxy, J. Appl. Phys., 2006, vol. 99, p. 023703.
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Rusak, T.F., Enisherlova, K.L., Lutzau, A.V. et al. Dislocation Structure of Epitaxial Layers of AlGaN/GaN/α-Al2O3 Heterostructures Containing a GaN Layer Doped with Carbon and Iron. Russ Microelectron 47, 598–607 (2018). https://doi.org/10.1134/S1063739718080097
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DOI: https://doi.org/10.1134/S1063739718080097