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Tensile deformation induced structural rearrangement in amorphous silicon nitride

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Abstract

Silicon nitride exhibits good mechanical properties and thermal stability at high temperatures. Since experiments have limitations in nanoscale characterization of the chemical structure and related properties, atomistic simulation is a proper way to investigate the mechanism of this unique feature. In this paper, the melt-quench method is used to generate the amorphous structure of silicon nitride; then the structural properties of silicon nitride under tensile deformation were studied by angular pair distribution functions. The corresponding mechanism of tensile stress induced structure rearrangement is explored.

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Authors and Affiliations

  1. College of Mechanical and Electrical Engineering, Wenzhou University, Wenzhou, 325035, P.R. China

    N. Liao, W. Xue & M. Zhang

  2. Laboratory of Materials and Micro-Structural Integrity, Jiangsu University, Zhenjiang, P.R. China

    P. Yang

Authors
  1. N. Liao
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  2. W. Xue
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  3. P. Yang
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  4. M. Zhang
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Correspondence to N. Liao.

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Original Russian Text Copyright © 2012 by N. Liao, W. Xue, P. Yang, M. Zhang

The text was submitted by the authors in English. Zhurnal Strukturnoi Khimii, Vol. 53, No. 2, pp. 219–223, March–April, 2012.

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Liao, N., Xue, W., Yang, P. et al. Tensile deformation induced structural rearrangement in amorphous silicon nitride. J Struct Chem 53, 215–219 (2012). https://doi.org/10.1134/S0022476612020023

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  • DOI: https://doi.org/10.1134/S0022476612020023

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