Abstract
An approach is proposed to study the composition of synthesized thin zinc films doped with In and Ga through local X-ray spectral analysis (LXSA) and inductively coupled plasma mass spectrometry (ICP-MS). A relationship between the amount/distribution of additives in the sample and synthesis conditions on rotating substrates is found. The results of determining the dominant impurities in film solutions with ICP-MS are used to validate those obtained with the LXSA method without sample preparation. To find doping impurities at an amount less than 1 at % is possible only through the ICP-MS method.
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Original Russian Text © D.G. Filatova, N.A. Vorobyeva, M.N. Rumyantseva, V.B. Baranovskaya, A.E. Baranchikov, V.K. Ivanov, A.M. Gaskov, 2016, published in Zavodskaya Laboratoriya, Diagnostika Materialov, 2016, Vol. 82, No. 11, pp. 17–21.
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Filatova, D.G., Vorobyeva, N.A., Rumyantseva, M.N. et al. Synthesis of ZnO Thin Films Doped with Ga and In: Determination of Their Composition through X-Ray Spectroscopy and Inductively Coupled Plasma Mass Spectrometry. Inorg Mater 53, 1458–1462 (2017). https://doi.org/10.1134/S0020168517140060
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DOI: https://doi.org/10.1134/S0020168517140060