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Micromechanical properties of GaP〈Dy〉 epilayers

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Abstract

The physicomechanical properties of GaP epilayers grown by liquid phase epitaxy from indium-based high-temperature solutions have been studied using microindentation. The results demonstrate that the growth of GaP epilayers from indium-based high-temperature solutions leads to a reduction in their microhardness, microbrittleness, and fracture toughness. The addition of a rare-earth dopant to a high-temperature solution has an ambiguous effect on the strength of the epilayers. Low rare-earth concentrations may both reduce and increase the microhardness of the epilayers, depending on epitaxy conditions. The random microhardness distribution of samples containing rare-earth inclusions has two peaks: one due to the rareearth inclusions, and the other due to the region with a relatively low lanthanide concentration.

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Authors and Affiliations

  1. Belarussian State University, pr. Nezavisimosti 4, Minsk, 220030, Belarus

    D. I. Brinkevich & V. S. Prosolovich

  2. Polotsk State University, ul. Blokhina 29, Novopolotsk, 211440, Belarus

    N. V. Vabishchevich

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  1. D. I. Brinkevich
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  2. N. V. Vabishchevich
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  3. V. S. Prosolovich
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Correspondence to D. I. Brinkevich.

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Original Russian Text © D.I. Brinkevich, N.V. Vabishchevich, V.S. Prosolovich, 2012, published in Neorganicheskie Materialy, 2012, Vol. 48, No. 8, pp. 878–883.

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Brinkevich, D.I., Vabishchevich, N.V. & Prosolovich, V.S. Micromechanical properties of GaP〈Dy〉 epilayers. Inorg Mater 48, 768–772 (2012). https://doi.org/10.1134/S0020168512070047

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  • DOI: https://doi.org/10.1134/S0020168512070047

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