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Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

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Abstract

The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.

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REFERENCES

  1. M. N. Libenson, E. B. Yakovlev, and G. D. Shandybina, The Interaction of Laser Radiation with Matter (NIU ITMO, St. Petersburg, 2014) [in Russian].

    Google Scholar 

  2. D. V. Amasev, M. V. Khenkin, R. Drevinskas, P. Kazansky, and A. G. Kazanskii, Tech. Phys. 62, 925 (2017).

    Article  Google Scholar 

  3. V. S. Makin, Yu. I. Pestov, and R. S. Makin, Opt. Spectrosc. 123, 289 (2017).

    Article  ADS  Google Scholar 

  4. G. K. Krivyakin, V. A. Volodin, A. A. Shklyaev, V. Mortet, J. More-Chevalier, P. Ashcheulov, Z. Remes, T. H. Stuchlikova, and J. Stuchlik, Semiconductors 51, 1370 (2017).

    Article  ADS  Google Scholar 

  5. C. Li, J. Ni, X. Sun, X. Wang, Z. Li, H. Cai, J. Li, and J. Zhang, J. Phys. D: Appl. Phys. 50, 045108 (2017).

    Article  ADS  Google Scholar 

  6. V. A. Volodin, G. K. Krivyakin, G. D. Ivlev, S. L. Prokopyev, S. V. Gusakova, and A. A. Popov, Semiconductors 53, 400 (2019).

    Article  ADS  Google Scholar 

  7. D. V. Shuleiko, M. N. Martyshov, D. E. Presnov, S. V. Zabotnov, and P. K. Kashkarov, J. Phys.: Conf. Ser. 1461, 012161 (2020).

  8. G. A. Martsinovsky, G. D. Shandybina, Yu. S. Dement’eva, R. V. Dyukin, S. V. Zabotnov, L. A. Golovan’, and P. K. Kashkarov, Semiconductors 43, 1298 (2009).

    Article  ADS  Google Scholar 

  9. S. V. Zabotnov, A. A. Ezhov, L. A. Golovan’, M. A. Lastovkina, V. I. Panov, V. Yu. Timoshenko, and P. K. Kashkarov, Semiconductors 41, 998 (2007).

    Article  ADS  Google Scholar 

  10. D. Bermejo and M. Cardona, J. Non-Cryst. Solids 32, 405 (1979).

    Article  ADS  Google Scholar 

  11. M. Cardona and R. Merlin, Light Scattering in Solids IX (Springer, Berlin, 1985).

    Google Scholar 

  12. V. A. Volodin, M. D. Efremov, A. I. Yakimov, G. Yu. Mikhalev, A. I. Nikiforov, and A. V. Dvurechenski, Semiconductors 41, 930 (2007).

    Article  ADS  Google Scholar 

  13. A. Ciesielski, L. Skowronski, W. Pacuski, and T. Szoplik, Mater. Sci. Semicond. Proc. 81, 64 (2018).

    Article  Google Scholar 

  14. G. Ambrosone, U. Coscia, S. Lettieri, P. Maddalena, and C. Minarini, Mater. Sci. Eng. B 101, 236 (2003).

    Article  Google Scholar 

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Funding

This work was supported by the fundamental research program of the Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, no. 0066-2019-0003.

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Authors and Affiliations

  1. Faculty of Physics, Moscow State University, 119991, Moscow, Russia

    A. V. Kolchin, D. V. Shuleiko, A. V. Pavlikov, S. V. Zabotnov, L. A. Golovan, D. E. Presnov & P. K. Kashkarov

  2. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    A. V. Pavlikov, S. V. Zabotnov & P. K. Kashkarov

  3. Skobeltsyn Institute of Nuclear Physics, Moscow State University, 119991, Moscow, Russia

    D. E. Presnov

  4. Center for Quantum Technologies, Moscow State University, 119991, Moscow, Russia

    D. E. Presnov

  5. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. A. Volodin & G. K. Krivyakin

  6. Novosibirsk State University, 630090, Novosibirsk, Russia

    V. A. Volodin & G. K. Krivyakin

  7. Institute of Physics and Technology (Yaroslavl Branch), Russian Academy of Sciences, 150007, Yaroslavl, Russia

    A. A. Popov

Authors
  1. A. V. Kolchin
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  2. D. V. Shuleiko
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  3. A. V. Pavlikov
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  4. S. V. Zabotnov
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  5. L. A. Golovan
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  6. D. E. Presnov
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  7. V. A. Volodin
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  8. G. K. Krivyakin
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  9. A. A. Popov
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  10. P. K. Kashkarov
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Corresponding author

Correspondence to A. V. Kolchin.

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The authors declare that they have no conflict of interest.

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Translated by N. Petrov

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Kolchin, A.V., Shuleiko, D.V., Pavlikov, A.V. et al. Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon. Tech. Phys. Lett. 46, 560–563 (2020). https://doi.org/10.1134/S1063785020060048

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  • DOI: https://doi.org/10.1134/S1063785020060048

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