Abstract
Molecular beam epitaxy techniques were used to grow a quantum-cascade laser (QCL) heterostructure based on an In0.53Ga0.47As/Al0.48In0.52As heteropair lattice-matched with an InP substrate. InP layers were used to form an optical waveguide. The obtained QCL heterostructure ensured room-temperature lasing in the 8-μm wavelength range at a maximum output optical power of 0.45 W from one facet in a standard ridge geometry of the Fabry–Pérot cavities formed by cleaved facets.
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Funding
A.V. Babichev, A.S. Kurochkin, E.S. Kolodeznyi, V.E. Bugrov, L.Ya. Karachinsky, I.I. Novikov, G.S. Soko-lovskii, and A.Yu. Egorov acknowledge support by the Ministry of Science and Higher Education of the Russian Federation within the Federal target program “Research and Development in Priority Areas of the Science and Technology Complex of Russia for 2014–2020,” project no. 2016-14-579-0009, agreement no. 14.578.21.0204, unique identifier RFMEFI57816X0204.
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Babichev, A.V., Dudelev, V.V., Gladyshev, A.G. et al. High-Power Quantum-Cascade Lasers Emitting in the 8-μm Wavelength Range. Tech. Phys. Lett. 45, 735–738 (2019). https://doi.org/10.1134/S1063785019070174
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DOI: https://doi.org/10.1134/S1063785019070174