Abstract
Spectral characteristics of the Ge subcell of triple-junction GaInP/GaAs/Ge solar cells have been simulated. It was shown that using a GaInP nucleation layer that creates a shallow diffusion p–n junction in Ge can raise the photogeneration current of the Ge subcell by ~4.5 mA/cm2 as compared with the value in the case of a GaAs nucleation layer. The optimal thickness of the GaInP layer (170–180 nm) makes it possible to additionally raise the photocurrent by ~1.5 mA/cm2. It was experimentally demonstrated that the photogenerated current of the Ge subcell of GaInP/GaAs/Ge solar cells increases by 3.9 mA/cm2 on replacing the GaAs nucleation layer with GaInP and there is an additional gain by 0.9 mA/cm2 on using the optimal thickness of the GaInP nucleation layer.
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Original Russian Text © S.A. Mintairov, V.M. Emel’yanov, N.A. Kalyuzhnyi, V.M. Andreev, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 22, pp. 95–101.
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Mintairov, S.A., Emel’yanov, V.M., Kalyuzhnyi, N.A. et al. An Antireflection Coating of a Germanium Subcell in GaInP/GaAs/Ge Solar Cells. Tech. Phys. Lett. 44, 1042–1044 (2018). https://doi.org/10.1134/S1063785018110263
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DOI: https://doi.org/10.1134/S1063785018110263