Abstract
Diamond single-crystal Schottky barrier mip-structures (metal–intrinsic diamond–p-doped diamond) with dimensions of 3 × 3 and 4.1 × 4.28 mm are fabricated on the basis of HTHP p-diamond and CVD i-diamond. The betavoltaic characteristics of the diamond structures are studied using a wide-aperture electron beam with an initial energy of 110 keV, partially scattered on the way to a converter by a 14-μm-thick aluminum layer and a 17-mm-thick air layer. The maximum generated power reached 2.18 mW (41 mW/cm2) with a conversion efficiency of 2–3%.
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Original Russian Text © V.N. Amosov, V.N. Babichev, N.A. Dyatko, S.A. Meshchaninov, A.F. Pal’, N.B. Rodionov, A.N. Ryabinkin, A.N. Starostin, A.V. Filippov, 2018, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2018, Vol. 44, No. 15, pp. 93–99.
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Amosov, V.N., Babichev, V.N., Dyatko, N.A. et al. Experimental Simulation of a Diamond Betavoltaic Battery. Tech. Phys. Lett. 44, 697–699 (2018). https://doi.org/10.1134/S1063785018080023
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DOI: https://doi.org/10.1134/S1063785018080023