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Studying transitions between different regimes of current oscillations generated in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures

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Abstract

The mechanisms of transitions between different regimes of current oscillations in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures have been studied. At relatively low temperatures, an increase in the applied voltage leads to a period-doubling bifurcation that causes a change in the dynamic regime. At increased temperatures, the transition takes place with the quenching of current oscillations.

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Correspondence to A. A. Koronovskii.

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Original Russian Text © A.O. Sel’skii, A.A. Koronovskii, O.I. Moskalenko, A.E. Hramov, T.M. Fromhold, M.T. Greenaway, A.G. Balanov, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 16, pp. 8–14.

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Sel’skii, A.O., Koronovskii, A.A., Moskalenko, O.I. et al. Studying transitions between different regimes of current oscillations generated in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures. Tech. Phys. Lett. 41, 768–770 (2015). https://doi.org/10.1134/S1063785015080301

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  • DOI: https://doi.org/10.1134/S1063785015080301

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