Abstract
The polytypism between cubic and hexagonal phases in III–V semiconductor nanowires has been analyzed on the basis of nucleation theory. Model calculations have been performed for the parameters of GaAs nanowhiskers grown on Au catalysts according to the vapor-liquid-solid (VLS) mechanism. New results are obtained for the critical chemical potentials and the dependence of percentage content of wurtzite phase on the concentration of group III element (Ga) in the liquid drop. These results have been used for the interpretation of some experimental data on the crystalline phase of Au-catalyzed GaAs nanowires grown by various epitaxial techniques.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. I. Persson, M. W. Larsson, S. Stengström, et al., Nature Mater. 3, 677 (2004).
V. G. Dubrovskii, G. E. Cirlin, and V. M. Ustinov, Semiconductors 43(12), 1539 (2009).
V. G. Dubrovskii, Nucleation Theory and Growth of Nanostructures (Springer, Heidelberg, 2014).
F. Glas, J. C. Harmand, and G. Patriarche, Phys. Rev. Lett. 99, 146101 (2007).
V. G. Dubrovskii, Tech. Phys. Lett. 37(1), 53 (2011).
E. Gil, V. G. Dubrovskii, G. Avit, et al., Nano Lett. 14, 3938 (2014).
D. L. Dheeraj, A. M. Munshi, M. Scheffler, et al., Nanotecnology 24, 015601 (2013).
H. J. Joyce, Q. Gao, H. H. Tan, et al., Nano Lett. 9, 695 (2009).
X. Ren, H. Huang, V. G. Dubrovskii, et al., Semicond. Sci. Technol. 26, 014034 (2011).
K. A. Dick, C. Thelander, L. Samuelson, et al., Nano Lett. 10, 3494 (2010).
S. A. Kukushkin and A. V. Osipov, Prog. Surf. Sci. 51, 1 (1996).
F. Glas, J. Appl. Phys. 108, 073506 (2010).
C.-Y. Yeh, Z. W. Lu, S. Froyen, et al., Phys. Rev. B 46, 10086 (1992).
V. G. Dubrovskii, Phys. Rev. B 87, 195426 (2013).
G. Priante, J. C. Harmand, G. Patriarche, et al., Phys. Rev. B 89, 241301 (2014).
V. G. Dubrovskii, Appl. Phys. Lett. 104, 053110 (2014).
F. Glas, M. R. Ramdani, G. Patriarche, et al., Phys. Rev. B 88, 195304 (2013).
N. V. Sibirev, M. A. Timofeeva, A. D. Bol’shakov, M. V. Nazarenko, and V. G. Dubrovskii, Phys. Solid State 52, 1531 (2010).
M. Rosini and R. Magri, Nano Lett. 10, 6021 (2010).
V. Pankoke, P. Kratzer, and S. Sakong, Phys. Rev. B 84, 075455 (2011).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © V.G. Dubrovskii, 2015, published in Pis’ma v Zhurnal Tekhnicheskoi Fiziki, 2015, Vol. 41, No. 4, pp. 102–110.
Rights and permissions
About this article
Cite this article
Dubrovskii, V.G. The theory of nucleation and polytypism of III–V semiconductor nanowires. Tech. Phys. Lett. 41, 203–207 (2015). https://doi.org/10.1134/S1063785015020200
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063785015020200