Abstract
It is shown that self-forming GeSi nanoislands built into the dielectric–semiconductor interface in the Si(001)-based metal–oxide–semiconductor (MOS) structures with the SiOx and ZrO2(Y) dielectric layers obtained by magnetron sputtering initiate bipolar resistive switching without preliminary electroforming. The I–V characteristics and electrical parameters of the MOS structures in the high- and low-resistance states have been investigated. The change in the charge incorporated in the dielectric at the dielectric–semiconductor interface during resistive switching has been established, which is related to the formation and destruction of conducting filaments. The optically stimulated switching of the MOS structures with the ZrO2(Y) dielectric layer from the high- to low-resistance state has been observed, which is caused by an increase in the conductivity of the space charge region in the Si substrate due to the interband optical absorption in Si leading to the voltage redistribution between Si and ZrO2(Y). A difference between the shapes of the low-signal photovoltage spectra of the MOS structures in the spectral region of the Si intrinsic photosensitivity in the high- and low-resistance states related to the leakage of photoexcited carriers from Si into a metal electrode through filaments has been found.
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REFERENCES
Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications, Ed. by D. Ielmini and R. Waser (Wiley-VCH, Weinheim, 2016).
F. Merrikh Bayat, M. Prezioso, B. Chakrabarti, H. Nili, I. Kataeva, and D. Strukov, Nat. Commun. 9, 2331 (2018). https://doi.org/10.1038/s41467-018-04482-4
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, and A. P. Kasatkin, Tech. Phys. Lett. 42 (5), 536 (2016). https://doi.org/10.1134/S1063785016050308
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, and M. N. Koryazhkina, Tech. Phys. Lett. 40 (10), 837 (2014). https://doi.org/10.1134/S1063785014100137
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, M. N. Koryazhkina, and A. N. Sharapov, RF Patent No. 2585963 (May 11, 2016).
D. Ielmini, Semicond. Sci. Technol. 31, 063002 (2016). https://doi.org/10.1088/0268-1242/31/6/063002
D. O. Filatov, V. V. Karzanov, I. N. Antonov, and O. N. Gorshkov, Tech. Phys. Lett. 44 (12), 1160 (2018). https://doi.org/10.1134/S1063785018120416
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vihrova, and A. I. Morozov, Semiconductors 50 (12), 1589 (2016). https://doi.org/10.1134/S1063782616120228
D. O. Filatov, M. V. Kruglova, M. A. Isakov, S. V. Siprova, M. O. Marychev, V. G. Shengurov, V. Yu. Chalkov, and S. A. Denisov, Semiconductors 42 (9), 1098 (2008). https://doi.org/10.1134/S1063782608090169
S. P. Svetlov, V. G. Shengurov, V. Yu. Chalkov, Z. F. Krasil’nik, B. A. Andreev, and Yu. N. Drozdov, Izv. Akad. Nauk, Ser. Fiz. 65 (2), 204 (2001).
A. I. Yakimov, A. V. Dvurechenski, V. V. Kirienko, and A. I. Nikiforov, Phys. Solid State 47 (1), 34 (2005). https://doi.org/10.1134/1.1853439
P. T. Oreshkin, Physics of Semiconductors and Dielectrics (Vysshaya Shkola, Moscow, 1977) [in Russian].
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, and D. I. Tetelbaum, Tech. Phys. 61 (5), 745 (2016). https://doi.org/10.1134/S106378421605025X
S. V. Tikhov, Semiconductors 46 (10), 1274 (2012). https://doi.org/10.1134/S1063782612100144
V. N. Ovsyuk, Electronic Processes in Semiconductors with Regions of Spatial Charge (Nauka, Novosibirsk, 1984) [in Russian].
A. K. Zakharov, I. G. Neizvestnyi, and V. N. Ovsyuk, in Properties of Metal–Insulator–Semiconductor Structures, Ed. by A. V. Rzhanov (Nauka, Moscow, 1976), pp. 47–97 [in Russian].
A. N. Mikhaylov, A. I. Belov, D. V. Guseinov, D. S. Korolev, I. N. Antonov, D. V. Efimovykh, S. V. Tikhov, A. P. Kasatkin, O. N. Gorshkov, D. I. Tetelbaum, A. I. Bobrov, N. V. Malekhonova, D. A. Pavlov, E. G. Gryaznov, and A. P. Yatmanov, Mater. Sci. Eng., B 194, 48 (2015). https://doi.org/10.1016/j.mseb.2014.12.029
A. N. Mikhaylov, E. G. Gryaznov, A. I. Belov, D. S. Korolev, A. N. Sharapov, D. V. Guseinov, D. I. Tetelbaum, S. V. Tikhov, N. V. Malekhonova, A. I. Bobrov, D. A. Pavlov, S. A. Gerasimova, V. B. Kazantsev, N. V. Agudov, A. A. Dubkov, et al. Phys. Status Solidi C 13, 870 (2016). https://doi.org/10.1002/pssc.201600083
W. Sun, B. Gao, M. Chi, Q. Xia, J. J. Yang, H. Qian, and H. Wu, Nat. Commun. 10, 3453 (2019). https://doi.org/10.1038/s41467-019-11411-6
Fu-Chien Chiu, Zhi-Hong Lin, Che-Wei Chang, Chen-Chih Wang, Kun-Fu Chuang, Chih-Yao Huang, Joseph Ya-min Lee, and Huey-Liang Hwang, J. Appl. Phys. 97, 034506 (2005). https://doi.org/10.1063/1.1846131
S. S. Nekrashevich and V. A. Gritsenko, Phys. Solid State 56 (2), 207 (2014). https://doi.org/10.1134/S106378341402022X
A. P. Baraban, V. V. Bulavinov, and P. P. Konorov, Electronics of SiO2Layers on Silicon (Leningrad Gos. Univ., Leningrad, 1988) [in Russian].
S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, and A. N. Mikhaylov, Tech. Phys. 64 (6), 873 (2019). https://doi.org/10.1134/S1063784219060227
O. N. Gorshkov, I. N. Antonov, A. I. Belov, A. P. Kasatkin, and A. N. Mikhaylov, Tech. Phys. Lett. 40 (2), 101 (2014). https://doi.org/10.1134/S1063785014020084
W. Wang, G. N. Panin, X. Fu, L. Zhang, P. Ilanchezhiyan, V. O. Pelenovich, D. Fu, and T. W. Kang, Sci. Rep. 6 (1), 1 (2016). https://doi.org/10.1038/srep31224
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, and P. Dimitrakis, Semiconductors 52 (12), 1540 (2018). https://doi.org/10.1134/S1063782618120242
Funding
This study was supported by the Russian Foundation for Basic Research, projects nos. 18-29-23001 (optimizing the metal–oxide memristor structures) and 19-29-03026 (the use of SiGe epitaxial structures).
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Translated by E. Bondareva
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Tikhov, S.V., Shengurov, V.G., Denisov, S.A. et al. Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate. Tech. Phys. 65, 1668–1676 (2020). https://doi.org/10.1134/S1063784220100229
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DOI: https://doi.org/10.1134/S1063784220100229