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Transport Features in the Topological Phase Hg0.87Cd0.13Te under Terahertz Photoexcitation

  • XXIV INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 10–13, 2020
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Abstract

In this paper, we report on photoconductivity induced by high-power laser radiation with a frequency of 2 THz in Hg0.87Cd0.13Te-based epitaxial structures. Experimental results obtained for a set of the samples with variable geometric parameters allow us to determine the photoresponse features of both bulk and nonlocal contributions to the net response. We show that the persistent photoconductivity effect originates from the non-equilibrium processes related to the bulk carrier excitation.

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Funding

This study was supported by the Russian Science Foundation, grant no. 19-12-00034. A. S. Kazakov thanks the Russian Foundation for Basic Research, project no. 19-32-90259, for its support. S.N. Danilov thanks the Elite Network of Bavaria (K-NW-2013-247) and the Volkswagen Stiftung Program (97738) for support.

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Authors and Affiliations

  1. Lomonosov Moscow State University (Faculty of Physics), 119991, Moscow, Russia

    A. V. Galeeva, A. S. Kazakov, A. I. Artamkin & D. R. Khokhlov

  2. Rzhanov Institute of Semiconductors Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    S. A. Dvoretsky & N. N. Mikhailov

  3. Lebedev Physical Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    M. I. Bannikov & D. R. Khokhlov

  4. Faculty of Physics, University of Regensburg, D-93053, Regensburg, Germany

    S. N. Danilov

  5. Lomonosov Moscow State University (Faculty of Chemistry), 119991, Moscow, Russia

    L. I. Ryabova

Authors
  1. A. V. Galeeva
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  2. A. S. Kazakov
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  3. A. I. Artamkin
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  4. S. A. Dvoretsky
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  5. N. N. Mikhailov
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  6. M. I. Bannikov
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  7. S. N. Danilov
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  8. L. I. Ryabova
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  9. D. R. Khokhlov
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Correspondence to A. V. Galeeva.

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Translated by V. Bukhanov

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Galeeva, A.V., Kazakov, A.S., Artamkin, A.I. et al. Transport Features in the Topological Phase Hg0.87Cd0.13Te under Terahertz Photoexcitation. Semiconductors 54, 1064–1068 (2020). https://doi.org/10.1134/S1063782620090109

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  • DOI: https://doi.org/10.1134/S1063782620090109

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